Téléchargez le livre : Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

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Springer


Collection :

SpringerBriefs in Molecular Science

Paru le : 2013-11-22

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Description

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.
Pages
66 pages
Collection
SpringerBriefs in Molecular Science
Parution
2013-11-22
Marque
Springer
EAN papier
9783642409042
EAN EPUB
9783642409059
Informations sur l'ebook
Nombre pages copiables
0
Nombre pages imprimables
6
Taille du fichier
1270 Ko
Prix
52,74 €

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