Téléchargez le livre : Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets

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Éditeur :

Springer


Collection :

Springer Theses

Paru le : 2017-10-04

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Description


This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallicGd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.
Pages
164 pages
Collection
Springer Theses
Parution
2017-10-04
Marque
Springer
EAN papier
9783319666068
EAN PDF
9783319666075
Informations sur l'ebook
Nombre pages copiables
1
Nombre pages imprimables
16
Taille du fichier
5161 Ko
Prix
108,89 €
EAN EPUB
9783319666075
Informations sur l'ebook
Nombre pages copiables
1
Nombre pages imprimables
16
Taille du fichier
3666 Ko
Prix
108,89 €

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