Téléchargez le livre : Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

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Éditeur :

Springer


Collection :

Springer Theses

Paru le : 2018-11-29

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Description


This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known.  The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performanceof the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Pages
102 pages
Collection
Springer Theses
Parution
2018-11-29
Marque
Springer
EAN papier
9789811334436
EAN PDF
9789811334443
Informations sur l'ebook
Nombre pages copiables
1
Nombre pages imprimables
10
Taille du fichier
6523 Ko
Prix
126,59 €
EAN EPUB
9789811334443
Informations sur l'ebook
Nombre pages copiables
1
Nombre pages imprimables
10
Taille du fichier
30853 Ko
Prix
126,59 €

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