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Télécharger le livre : The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
Mahdi Pourfath
The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical...
Editeur : Springer
Parution : 2014-07-05
Collection : Computational Microelectronics
Format(s) : ePub
105,49 €
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Télécharger le livre : Deterministic Solvers for the Boltzmann Transport Equation
Sung-Min Hong , Christoph Jungemann , Anh-Tuan Pham
Deterministic Solvers for the Boltzmann Transport Equation
The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered.The important aspects of stabilization and band structure mapping are...
Editeur : Springer
Parution : 2011-07-31
Collection : Computational Microelectronics
Format(s) : ePub
94,94 €
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Télécharger le livre : Strain-Induced Effects in Advanced MOSFETs
Viktor Sverdlov
Strain-Induced Effects in Advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure...
Editeur : Springer
Parution : 2011-01-06
Collection : Computational Microelectronics
Format(s) : ePub
147,69 €
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